M. P. Mikhailova, È. V. Ivanov, K. D. Moiseev, Yu. P. Yakovlev, E. Hulicius, A. Hospodkova, J. Pangrac, T. Šimeček, “Electroluminescence in $p$-InAs/AlSb/InAsSb/AlSb/$p(n)$-GaSb type II heterostructures with deep quantum wells at the interface”, Fizika i Tekhnika Poluprovodnikov, 2010, Volume 44, Issue 1,Pages 69

This article is cited in 7 papers

Low-dimensional systems

Electroluminescence in $p$-InAs/AlSb/InAsSb/AlSb/$p(n)$-GaSb type II heterostructures with deep quantum wells at the interface

M. P. Mikhailova^a, È. V. Ivanov^a, K. D. Moiseev^a, Yu. P. Yakovlev^a, E. Hulicius^b, A. Hospodkova^b, J. Pangrac^b, T. Šimeček^b

^a Ioffe Institute, St. Petersburg
^b Institute of Physics, Czech Academy of Sciences, 16200 Prague, Czech Republic

Abstract: Luminescent characteristics of asymmetric $p$-InAs/AlSb/InAsSb/AlSb/$p$-GaSb type II heterostructures with deep quantum wells at the heterointerface are studied. The heterostructures were grown by metalorganic vapor phase epitaxy. Intense positive and negative luminescence was observed in the range of photon energies of 0.3–0.4 eV with a forward and reverse bias, respectively. Dependences of the spectra and intensities for positive and negative luminescence on the pumping current and on the temperature are studied in the range of 77–380 K. It is established that, at a temperature higher than 75$^\circ$C, intensity of negative luminescence surpasses that of positive luminescence by 60%. The suggested heterostructures can be used as lightemitting diodes (photodiodes) with switched positive and negative luminescence in the mid-IR spectral range of 3–4 $\mu$m.

Received: 01.06.2009
Accepted: 08.06.2009