Semiconductor structures, interfaces and surfaces

Monitoring the composition of the Cd$_{1-z}$Zn$_z$Te heteroepitaxial layers by spectroscopic ellipsometry

M. V. Yakushev^a, V. A. Shvets^ab, I. A. Azarov^a, S. V. Rykhlitskii^a, Yu. G. Sidorov^a, E. V. Spesivtsev^a, T. S. Shamirzaev<sup>a

a</sup> Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^b Novosibirsk State University

Abstract: A hardware-software complex based on a spectroscopic ellipsometer integrated into a molecular beam epitaxy installation and destined to monitor the composition of the Cd$_{1-z}$Zn$_z$Te alloy at small values of $z$ is described. Methodical features of determination of the composition of growing layers by the spectra of ellipsometric parameters are considered. The procedure of determination of the composition by the absorption edge that allows measuring this parameter accurate to 1.2% is developed. Problems are considered the solutions of which will allow one to increase the resolution by the composition. In particular, maintaining a stable temperature during growth is required for this purpose.

Received: 27.04.2009
Accepted: 04.05.2009

 English version: Semiconductors, 2010, 44:1, 59–65

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