This article is cited in 8 papers

Semiconductor structures, interfaces and surfaces

Dynamics of photoluminescence and recombination processes in Sb-containing laser nanostructures

D. A. Firsov^a, L. Shterengas^b, G. Kipshidze^b, V. L. Zerova^a, T. Hosoda^b, P. Thumrongsilapa^a, L. E. Vorob'ev^a, G. Belenky<sup>b

a</sup> Peter the Great St. Petersburg Polytechnic University
^b Department of Electric and Computer Engineering, State University of New York at Stony Brook, New York 11794-2350, USA

Abstract: The dynamics of interband photoluminescence has been studied at various temperatures and excitation levels in structures with quantum wells based on InGaAsSb alloys and barriers based on AlGaAsSb and AlInGaAsSb alloys. The lifetimes of optically injected charge carriers in quantum wells at various temperatures and levels of optical excitation have been experimentally determined. An increase in the recombination rate in structures with deeper InGaAsSb/AlGaAsSb quantum wells for electrons is attributed to manifestation of resonant Auger recombination. The Auger recombination brings about heating of electrons and holes in lower subbands of dimensional quantization. The temperature of charge carriers in the course of Auger recombination is estimated using the equation for balance of power with accumulation of nonequilibrium optical phonons taken into account. The studied structures were used to fabricate lasers of two types with lasing wavelength of approximately 3 $\mu$m; it is shown that the use of a quinary alloy as the material for the barrier leads to an improvement in the characteristics of the lasers.

Received: 06.05.2009
Accepted: 14.05.2009

 English version: Semiconductors, 2010, 44:1, 50–58

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