This article is cited in 9 papers

Electronic and optical properties of semiconductors

Inherent potential inhomogeneity on the semiconductor surface for equilibrium impurity distribution

V. B. Bondarenko, S. N. Davydov, A. V. Filimonov

Peter the Great St. Petersburg Polytechnic University

Abstract: The inherent inhomogeneity of potential on the doped-semiconductor surface during the formation of equilibrium diffusion distribution for an electroactive impurity in the space-charge layers is discussed. The characteristic random-potential values are determined in the case of nondegenerate surface electron gas. The dependence of these inhomogeneities on the surface and bulk parameters is shown.

Received: 19.05.2009
Accepted: 28.05.2009

 English version: Semiconductors, 2010, 44:1, 41–44

Bibliographic databases:

•