This article is cited in 13 papers

Electronic and optical properties of semiconductors

Effect of growth temperature on properties of transparent conducting gallium-doped ZnO films

A. Kh. Abduev^a, A. K. Akhmedov^a, A. Sh. Asvarov^a, A. A. Abdullaev^a, S. N. Sulyanov<sup>b

a</sup> Daghestan Institute of Physics after Amirkhanov
^b Institute of Cristallography Russian Academy of Sciences, Moscow

Abstract: Transparent conducting gallium-doped ZnO films are deposited on glass substrates by magnetron sputtering of conducting ceramic targets. The dependences of structural, electric, and optical characteristics of ZnO:Ga films on the substrate temperature are investigated during the deposition. Stability of resistivity of films is considered during annealing in air. It is found that the films deposited at the substrate temperature of 250$^\circ$C have the lowest resistivity of 3.8 $\cdot$ 10$^{-4}$ $\Omega$ cm, while those deposited at 200$^\circ$C have the highest thermal stability.

Received: 03.03.2009
Accepted: 09.04.2009

 English version: Semiconductors, 2010, 44:1, 32–36

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