This article is cited in 2 papers

Electronic and optical properties of semiconductors

Spreading resistance and compensation of charge carriers in ferromagnetic silicon implanted with manganese

A. F. Orlov^a, L. A. Balagurov^a, I. V. Kulemanov^a, Yu. N. Parkhomenko^a, A. A. Kartavih^b, V. V. Saraikin^c, Yu. A. Agafonov^d, V. I. Zinenko<sup>d

a</sup> JSC "Giredmet" SRC RF, the Federal State Research and Design Institute of Rare Metal Industry, Moscow
^b Institute for Chemical Problems in Microelectronics, Moscow, 119017, Russia
^c State Research Institute of Physical Problems
^d Institute of Microelectronics Technology and High-Purity Materials RAS

Abstract: Profiles of impurity distribution and spreading resistance have been studied in the layers of ferromagnetic silicon obtained by implantation of Mn (or Co). Standard wafers of $n$- and $p$-Si with a high or low electrical conductivity were implanted with Mn ions with the dose (1–5) $\cdot$ 10$^{16}$ cm$^{-2}$. It is found that, as a result of postimplantation annealing in vacuum for 5 min at 850$^\circ$C, Mn manifests itself as an amphoteric impurity and compensates acceptors in high-resistivity $p$-Si and donors in low-resistivity $n$-Si. It is shown that only an insignificant fraction of Mn ions (1–2%) is electrically active and is involved in compensation. The magnitude of compensation is used to determine energies of the levels $E_c$ – 0.12 eV for $n$-Si and $E_v$ + 0.32 eV for $p$-Si; these levels are attributed to Mn ions at interstitial sites in the silicon crystal lattice, i.e., (Mn$_i$)$^{-/0}$ и (Mn$_i$)$^{+/++}$, respectively.

Received: 26.03.2009
Accepted: 06.04.2009

 English version: Semiconductors, 2010, 44:1, 28–31

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