This article is cited in 1 paper

Manufacturing, processing, testing of materials and structures

Comprehensive study of the conditions for obtaining hydrogenated amorphous erbium- and oxygen-doped silicon suboxide films, $a$-SiO$_x$:H$\langle$Er,O$\rangle$, by dc-magnetron deposition

Yu. K. Undalov^a, E. I. Terukov^a, O. B. Gusev^a, V. M. Lebedev^b, I. N. Trapeznikova<sup>a

a</sup> Ioffe Institute, St. Petersburg
^b The Petersburg Nuclear Physics Institute, The National Research Center "Kurchatov Institute"

Abstract: The results of a comprehensive study of the conditions for growing $a$-SiO$_x$:H$\langle$Er,O$\rangle$ films are presented. The effect of the composition of various erbium-containing targets ($a$-SiO$_x$:H$\langle$Er,O$\rangle$, ErO$_x$, Er$_2$SiO$_5$, Er$_2$O$_3$, and Er), substrate temperature, and annealing temperatures in argon, air, and under conditions of SiH$_4$+Ar+O$_2$ plasma glow is studied. In order to obtain $a$-SiO$_x$:H$\langle$Er,O$\rangle$ films with the highest photoluminescence intensity of erbium ions, it is recommended for the following technological conditions to be used: the substrate holder should be insulated from dc-magnetron electrodes and the working gas mixture should include silane, argon, and oxygen. Single-crystal silicon and metal erbium should be used as targets. The erbium target should be placed only in the Si-target erosion zone.

Received: 19.05.2011
Accepted: 30.05.2011

 English version: Semiconductors, 2011, 45:12, 1604–1616

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