This article is cited in 6 papers

Manufacturing, processing, testing of materials and structures

Silicon ion implantation for growing structurally perfect silicon layers on sapphire

V. M. Vorotyntsev^a, E. L. Shobolov^b, V. A. Gerasimov<sup>b

a</sup> Nizhny Novgorod State Technical University
^b Research and Development Center, Sedakov Measuring Systems Research Institute, Nizhny Novgorod, 603137, Russia

Abstract: The paper presents the results of studying a method for improving the crystal structure of $\hat{o}$ silicon epitaxial layer on a sapphire substrate by its preliminary amorphization with high-energy silicon ions followed by its recovery (solid-phase recrystallization) to a structurally perfect single-crystal state. The structural and electrical parameters of silicon-on-sapphire compositions are comparatively analyzed before and after solid-phase recrystallization.

Received: 28.04.2011
Accepted: 16.05.2011

 English version: Semiconductors, 2011, 45:12, 1600–1603

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