This article is cited in 11 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Nitride chemical passivation of a GaAs (100) Surface: Effect on the electrical characteristics of Au/GaAs surface-barrier structures

V. L. Berkovits, T. V. L'vova, V. P. Ulin

Ioffe Institute, St. Petersburg

Abstract: The effect of chemical nitridation of GaAs substrates in a hydrazine-sulfide solution on the electrical characteristics of Au/GaAs Schottky structures has been studied. In nitridation of this kind, a solid passivating gallium nitride film with a monolayer thickness is formed on the surface of GaAs, providing almost direct contact between the semiconductor and the metal deposited on its surface. Au/GaAs structures fabricated on nitride substrates have ideality factors close to unity and are characterized by a narrow scatter of potential barrier heights. Prolonged heating of these structures at 350$^\circ$C does not change these parameters. The data obtained show that the nitride monolayer formed on the GaAs surface upon treatment in hydrazidesulfide solutions effectively hinders atomic migration across the metal-semiconductor phase boundary.

Received: 24.05.2011
Accepted: 01.06.2011

 English version: Semiconductors, 2011, 45:12, 1575–1579

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