Semiconductor structures, low-dimensional systems, quantum phenomena

Movement of the boundary of a $p$–$n$ junction in GaAs:Si under gyrotronic irradiation

G. A. Sukach^a, V. V. Kidalov<sup>b

a</sup> National University of Life and Environment Sciences of Ukraine, 03041, Kiev, Ukraine
^b Berdyansk State Pedagogical University

Abstract: It is shown that, by using a gyratron, it is possible to control the position of a $p$–$n$ junction in an already fabricated light-emitting structure. A shift of the compensated region in the emitting structure based on GaAs:Si is caused by the motion of impurities in the field of thermoelastic stresses appearing in the course of sample cooling after gyrotronic irradiation.

Received: 17.05.2011
Accepted: 01.06.2011

 English version: Semiconductors, 2011, 45:12, 1571–1574

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