Electronic properties of semiconductors

Photopiezoelectric induction of resonant acoustic waves in semi-insulating gallium arsenide single crystals

V. I. Mitrokhin, S. I. Rembeza, R. N. Antonov

Voronezh State Technical University

Abstract: The effect of resonant acoustic wave excitation in semi-insulating gallium-arsenide single crystals is investigated by means of light pulses. The peak amplitude of excited elastic oscillations is observed in a temperature range, where small values of the internal friction and electrical conductivity of the semiconductor take place simultaneously. The effect is related to the inverse piezoelectric conversion of the bulk-photovoltage energy into the mechanical deformation of the semiconductor crystal. The results of the investigations can be used for designing semiconductor photodetectors with high modulation-frequency selectivity.

Received: 17.05.2011
Accepted: 24.05.2011

 English version: Semiconductors, 2011, 45:12, 1550–1554

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