This article is cited in 4 papers

Electronic properties of semiconductors

Effect of pressure on the electronic spectrum of indium arsenide

I. K. Kamilov, S. F. Gabibov, M. I. Daunov, A. Yu. Mollaev

Daghestan Institute of Physics after Amirkhanov

Abstract: Based on the dependences of the Hall coefficient and the resistivity of $n$- and $p$-InAs and $p$-InAs $\langle$Mn$\rangle$ bulk crystals on hydrostatic pressures up to 9 GPa at 77 and 300 K, the evolution of the energy spectrum of electrons upon isotropic contraction of a crystal lattice is studied. Intervals between the energy levels of shallow, deep, and deep resonance impurity centers and between the edges of intrinsic bands, and the pressure coefficients for these intervals, were determined.

Received: 12.04.2011
Accepted: 16.05.2011

 English version: Semiconductors, 2011, 45:12, 1543–1549

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