This article is cited in 4 papers

Electronic properties of semiconductors

Space-charge-limited currents in an Se$_{95}$As$_5$ chalcogenide glass-like semiconductor system containing EuF$_3$ impurities

A. I. Isayev, S. I. Mekhtieva, S. N. Garibova

Institute of Physics Azerbaijan Academy of Sciences

Abstract: It is established that charge carrier (hole) transport in the Al–Se$_{95}$As$_5\langle$EuF$_3\rangle$-Te structure is effected by unipolar injection currents limited by space charges with the involvement of two capture trap groups. Shallow traps corresponding to charged intrinsic defects $C_1^-$ are related to broken selenium bonds. Deep traps corresponding to charged intrinsic defects $P_2^-$ are formed by arsenic atoms with broken coordination. It is shown that the EuF$_3$ impurity strongly affects the concentration of the capture traps, especially those localized near the Fermi level.

Received: 14.03.2011
Accepted: 29.04.2011

 English version: Semiconductors, 2011, 45:12, 1538–1542

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