This article is cited in 1 paper

Manufacturing, processing, testing of materials and structures

Comparison of the homoepitaxial growth of AlN crystals on Al and N surfaces

A. A. Vol'fson, E. N. Mokhov

Ioffe Institute, St. Petersburg

Abstract: A special experimental technique capable of excluding the influence of differences between sources, substrate crystals, and growth process parameters has been employed to correctly compare the quality of homoepitaxial AlN layers grown by sublimation on Al and N surfaces of the substrate crystal with $\langle$0001$\rangle$ orientation. It has been found that, in most cases, the quality of layers grown on the N surface is somewhat higher; however, no differences have been observed in separate cases. Hence the conclusion follows that the range of growth process parameters is substantially wider for the N side compared with the Al side.

Received: 17.05.2011
Accepted: 21.05.2011

 English version: Semiconductors, 2011, 45:11, 1517–1518

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