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Fizika i Tekhnika Poluprovodnikov, 2011 Volume 45, Issue 11, Pages 1564–1570 (Mi phts8692)

This article is cited in 16 papers

Semiconductor physics

The influence of prolonged storage and forward-polarity voltage on the efficiency of CdS/CdTe-based film solar cells

G. S. Khrypunov, V. R. Kopach, A. V. Meriuts, R. V. Zaitsev, M. V. Kirichenko, N. V. Deineko

Khar'kov Polytechnical University

Abstract: The influence of storage for 48 months and subsequent effect of the forward-polarity voltage on the operational efficiency of film solar cells with the starting layered structure $n^+$-ITO/$n$-CdS/$p$-CdTe/Cu/Au is investigated by the methods of the current-voltage and capacitance-voltage characteristics. A physical model of degradation of this type of solar cells under the influence of the mentioned factors is improved based on the obtained results. The conditions are determined under which partial efficiency restoration of these cells after their degradation is possible via holding at room temperature under a forward bias voltage of the $p$$n$ heterojunction lower that the open-circuit voltage.

Received: 10.05.2011
Accepted: 15.05.2011


 English version:
Semiconductors, 2011, 45:11, 1505–1511

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