Effect of temperature on the electroluminescent properties of mid-IR ($\lambda_{\mathrm{max}}\approx$ 4.4 $\mu$m) flip-chip LEDs based on an InAs/InAsSbP heterostructure
Abstract:
The temperature dependence (20–200$^\circ$C) of the electrical and electroluminescent properties of a flip-chip light-emitting diode (LED) based on an InAs/InAsSbP heterostructure ($\lambda_{\mathrm{max}}\approx$ 3.37 $\mu$m) has been studied. It is shown that the charge transport through the LED is governed by the tunneling-recombination (at a forward bias) and diffusion (at a reverse bias) mechanisms. The peak of the emission spectrum is due to the band-to-band recombination. As the LED is heated, the emission spectrum shifts to longer wavelengths because of the decrease in the energy gap of gallium arsenide. The emission power superexponentially decreases with increasing temperature, which is mainly due to a rise in the Auger recombination rate.
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