Semiconductor physics
Technological features of irradiation of Si $p^+$–$n$–$n^+$ diodes with electrons at elevated temperatures
I. G. Marchenko,
N. E. Zhdanovich Scientific-Practical Materials Research Centre of NAS of Belarus
Abstract:
The behavior of the lifetime of nonequilibrium charge carriers
$\tau_{\mathrm{p}}$, the reverse current
$I_{\mathrm{R}}$, and the forward-voltage drop
$U_{\mathrm{F}}$ in electron-irradiated (
$E_{\mathrm{irr}}$ = 6 MeV) commercial
$p^+$–
$n$–
$n^+$ diodes at irradiation temperatures in the range of
$T_{\mathrm{irr}}$ = 20–400°C is studied. Studies have been performed for samples fabricated on a single-crystal Si substrate either doped with phosphorus in the course of growth by the Czochralski method (Cz-
$n$-Si:P) or doped with phosphorus by nuclear transmutations, neutron-transmutation doped Si (NTD
$n$-Si:P). It is shown that, by choosing the temperature conditions of technological irradiation, one can solve the problem of attaining small values of
$\tau_{\mathrm{p}}$ at a minimal increase in
$U_{\mathrm{F}}$ and
$I_{\mathrm{R}}$ in fast-response diodes. It is established that, in the case of comparable variations in
$\tau_{\mathrm{p}}$ in the base region of diodes, the best relation between
$U_{\mathrm{F}}$ and
$I_{\mathrm{R}}$ is observed at
$T_{\mathrm{irr}}$ = 300
$^\circ$C in
$n$-Si:P samples doped by the Czochralski method and at
$T_{\mathrm{irr}}$ = 350
$^\circ$C in samples doped by reactions induced by thermal neutrons.
Received: 14.04.2011
Accepted: 29.04.2011
Fulltext:
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