This article is cited in 1 paper

Micro- and nanocrystalline, porous, composite semiconductors

Synthesis, structure and electrical properties of (SnO$_2$)$_x$(In$_2$O$_3$)$_{1-x}$ ($x$ = 0.5–1) nanocomposites

S. I. Rembeza^a, P. E. Voronov^b, B. M. Sinelnikov^b, E. S. Rembeza<sup>a

a</sup> Voronezh State Technical University
^b North Caucasus State Technical University

Abstract: The experimental results of synthesizing thin films ($<$ 1 $\mu$m thick) of (SnO$_2$)$_x$(In$_2$O$_3$)$_{1-x}$ ($x$ = 0.5–1 wt) nanocomposites fabricated by high-frequency magnetron sputtering of metal-oxide targets in a controlled Ar + O$_2$ atmosphere are presented. The films, deposited on hot substrates (400$^\circ$C), are studied by the X-ray diffraction analysis, atomic-force microscopy, and optical and electrical methods. The effect of the synthesis conditions and film composition on the size of crystalline grains, band gap, and the concentration and mobility of free charge carriers was determined. It is shown that films of the composition (SnO$_2$)$_x$(In$_2$O$_3$)$_{1-x}$ with $x$ = 0.9 are the most promising for applications in gas sensorics.

Received: 20.04.2011
Accepted: 29.04.2011

 English version: Semiconductors, 2011, 45:11, 1479–1482

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