This article is cited in 5 papers

Micro- and nanocrystalline, porous, composite semiconductors

Photoconductivity of PbTe:In films with variable microstructure

V. I. Chernichkin^a, A. A. Dobrovol'skiĭ^a, Z. M. Dashevskii^b, V. A. Kasiyan^b, V. V. Bel'kov^c, S. D. Ganichev^c, S. N. Danilov^c, L. I. Ryabova^a, D. R. Khokhlov<sup>a

a</sup> Lomonosov Moscow State University
^b Ben-Gurion University, 84105, Beer Sheva, Israel
^c University of Regensburg, D-93053, Regensburg, Germany

Abstract: It is shown that the microstructure and features of formation of surface states in nanocrystalline and polycrystalline PbTe:In films most significantly affect the character of photoconductivity in the spectral range of 1–2.5 THz. We present the results of a study and comparative analysis of the character of conductivity of PbTe:In films in the temperature range from 4.2 to 300 K in a static mode and in variable electric fields with a frequency of up to 1 MHz with illumination with white light and under the effect of high-power terahertz laser pulses with a wavelength of up to 280 $\mu$m.

Received: 20.04.2011
Accepted: 29.04.2011

 English version: Semiconductors, 2011, 45:11, 1474–1478

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