This article is cited in 2 papers

Micro- and nanocrystalline, porous, composite semiconductors

Polarization characteristics of surface plasmon resonance in SnO$_2$ nanocluster films

V. S. Grinevich^a, L. S. Maksimenko^b, I. E. Matyash^b, O. N. Mishchuk^b, S. P. Rudenko^b, B. K. Serdega^b, V. A. Smyntyna^c, L. N. Filevskaya<sup>c

a</sup> I. I. Mechnikov Odessa State University
^b Institute of Semiconductor Physics NAS, Kiev
^c I. I. Mechnikov Odessa National University

Abstract: Internal reflection features caused by the surface plasmon resonance in nanoscale films containing defect tin dioxide clusters in the stoichiometric dielectric matrix are studied by the method of polarization modulation of electromagnetic radiation. The angular and spectral characteristics of reflectances $R^2_s$ and $R^2_p$ of $s$- and $p$-polarized radiation and their polarization difference $\rho=R^2_s-R^2_p$ are measured in the wavelength range $\lambda$ = 400–1600 nm. The experimental characteristics $\rho(\theta,\lambda)$ ($\theta$ is the radiation incidence angle) obtained represent the optical property features associated with the film structure and morphology. Surface plasmon polaritons and local plasmons excited by $s$- and $p$-polarized radiation are detected; their frequency and relaxation properties are determined. The structural sensitivity of the technique for studying the surface plasmon resonance for tin dioxide films is shown.

Received: 11.04.2011
Accepted: 16.04.2011

 English version: Semiconductors, 2011, 45:11, 1467–1473

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