This article is cited in 4 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Shubnikov–de-Haas and de-Haas–van-Alphen oscillations in silicon nanostructures

N. T. Bagraev^a, E. S. Brilinskaya^b, D. S. Gets^a, L. E. Klyachkin^a, A. M. Malyarenko^a, V. V. Romanov<sup>b

a</sup> Ioffe Institute, St. Petersburg
^b St. Petersburg Polytechnic University

Abstract: The dependences of the longitudinal resistance and the static magnetic susceptibility on the magnetic field applied perpendicularly to the plane of an ultranarrow silicon quantum well confined by $\delta$ barriers heavily doped with boron demonstrate the high-temperature Shubnikov–de-Haas and de-Haas–van-Alphen oscillations in low magnetic fields. The results are indicative of the implementation of the high-field approximation $\mu B\gg$ 1 under these conditions due to the small effective mass of two-dimensional heavy holes, which is confirmed by measurements of temperature dependences of the de-Haas–van-Alphen oscillations.

Received: 19.05.2011

 English version: Semiconductors, 2011, 45:11, 1447–1452

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