V. P. Kuznetsov, M. V. Stepikhova, V. B. Shmagin, M. O. Marychev, N. A. Alyabina, M. V. Kuznetsov, B. A. Andreev, A. V. Kornaukhov, O. N. Gorshkov, Z. F. Krasil'nik, “Electroluminescence at a wavelength of 1.54 $\mu$m in Si:Er/Si structures consisting of a number of $p$–$n$ junctions”, Fizika i Tekhnika Poluprovodnikov, 2011, Volume 45, Issue 11,Pages 1486

Semiconductor structures, low-dimensional systems, quantum phenomena

Electroluminescence at a wavelength of 1.54 $\mu$m in Si:Er/Si structures consisting of a number of $p$–$n$ junctions

V. P. Kuznetsov^ab, M. V. Stepikhova^b, V. B. Shmagin^b, M. O. Marychev^c, N. A. Alyabina^a, M. V. Kuznetsov^a, B. A. Andreev^b, A. V. Kornaukhov^a, O. N. Gorshkov^a, Z. F. Krasil'nik^b

^a Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
^b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
^c Lobachevsky State University of Nizhny Novgorod

Abstract: A method of connecting several $p^+$–$n$ junctions in the same Si:Er/Si structure is demonstrated; this method makes it possible to increase the electroluminescence intensity at a wavelength of 1.54 $\mu$m. The structures have been grown by sublimation molecular-beam epitaxy.

Received: 12.04.2011
Accepted: 18.04.2011