This article is cited in 10 papers

Surface, interfaces, thin films

Optical Properties of Epitaxial Al$_x$In$_{1-x}$Sb Alloy Layers

O. S. Komkov^a, A. N. Semenov^b, D. D. Firsov^a, B. Ya. Mel'tser^b, V. A. Solov'ev^b, T. V. Popova^b, A. N. Pikhtin^a, S. V. Ivanov<sup>b

a</sup> Saint Petersburg Electrotechnical University "LETI"
^b Ioffe Institute, St. Petersburg

Abstract: Optical studies of unstrained narrow-gap Al$_x$In$_{1-x}$Sb semiconductor alloy layers are carried out. The layers are grown by molecular-beam epitaxy on semi-insulating GaAs substrates with an AlSb buffer. The composition of the alloys is varied within the range of $x$ = 0–0.52 and monitored by electron probe microanalysis. The band gap $E_g$ is determined from the fundamental absorption edge with consideration for the nonparabolicity of the conduction band. The refined bowing parameter in the experimental dependence $E_g(x)$ for the Al$_x$In$_{1-x}$Sb alloys is 0.32 eV. This value is by 0.11 eV smaller than the commonly referred one.

Received: 28.04.2011
Accepted: 11.05.2011

 English version: Semiconductors, 2011, 45:11, 1425–1429

Bibliographic databases:

•