This article is cited in 3 papers

Electronic properties of semiconductors

Low-temperature investigations of chemically deposited films of substitutional solid solutions based on lead and tin (II) selenides

V. F. Markov, Kh. N. Mukhametzyanov, L. N. Maskaeva, Z. I. Smirnova

Ural Federal University named after the First President of Russia B. N. Yeltsin, Ekaterinburg

Abstract: Photoelectric characteristics of films of the Pb$_{0.902}$Sn$_{0.098}$Se solid solution based on the four-layer (SnSe–PbSe)$_2$ composition obtained by layer-by-layer hydrochemical synthesis with subsequent heat treatment in air within the temperature range 523–700 K are investigated. The measurements are performed in the temperature range 220–300 K. The thermal and optical band gaps, temperature coefficient of the optical band gap, dark resistance, volt-watt sensitivity, and spectral characteristics are determined. It is established that, at heat treatment temperatures below 573 K, the conductivity of the four-layer (SnSe–PbSe)$_2$ compositions is characteristic of metals, while at higher temperatures, it is characteristic of $p$-type semiconductors.

Received: 19.04.2011
Accepted: 29.04.2011

 English version: Semiconductors, 2011, 45:11, 1404–1407

Bibliographic databases:

•