This article is cited in 14 papers

Electronic properties of semiconductors

Temperature dependence of the band gap of FeIn$_2$S$_4$ single crystals

I. V. Bondar', S. A. Pauliukavets

Belarussian State University of Computer Science and Radioelectronic Engineering

Abstract: Single crystals of the FeIn$_2$S$_4$ ternary compound are grown by the Bridgman method. The composition and structure of the crystals are established. The transmittance spectra of the crystals in the region of the fundamental absorption edge are studied in the temperature range of $T$ = 20–300 K. The band gap $E_g$ and its temperature dependence $E_g(T)$ are determined from the transmittance spectra. It is shown that the shape of the dependence $E_g(T)$ is typical of complex compounds.

Received: 14.03.2011
Accepted: 21.03.2011

 English version: Semiconductors, 2011, 45:11, 1395–1398

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