This article is cited in 11 papers

Electronic properties of semiconductors

Electrical properties of PbTe single crystals with excess tellurium

G. Z. Bagiyeva, N. B. Mustafaev, G. D. Abdinova, J. Sh. Abdinov

Institute of Physics Azerbaijan Academy of Sciences

Abstract: The effects of excess (up to 0.1 at%) Te atoms and heat treatment at 473 and 573 K for 120 h on the conductivity $\sigma$, thermopower $\alpha$, and Hall coefficient $R$ of PbTe single crystals are studied. It is shown that excess Te atoms and annealing strongly affect the values and character of the temperature dependences of these parameters and the signs of $\alpha$ and $R$ at low temperatures, which is caused by the acceptor effect of these atoms and the formation of antisite defects due to localization of Te in vacancies of the lead sublattice upon annealing.

Received: 29.03.2011
Accepted: 16.04.2011

 English version: Semiconductors, 2011, 45:11, 1391–1394

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