This article is cited in 20 papers

Semiconductor physics

Analysis of quenching conditions of Fabry–Perot mode lasing in semiconductor stripe-contact lasers

S. O. Slipchenko, A. A. Podoskin, D. A. Vinokurov, A. L. Stankevich, A. Yu. Leshko, N. A. Pikhtin, V. V. Zabrodskii, I. S. Tarasov

Ioffe Institute, St. Petersburg

Abstract: Radiative characteristics of semiconductor stripe-contact lasers operating under quenching conditions of Fabry–Perot-mode lasing are studied. It is found that reversible turning off of Fabry–Perot-mode lasing is caused by switching to closed-mode lasing. Radiative characteristics of the closed mode are controlled by the mode structure with the close-to-zero loss for radiation output, which covers the entire crystal. The main threshold conditions of closed-mode lasing are a decrease in interband absorption in the passive region and an increase in the modal gain of the closed-mode lasing line. It is shown that a decrease in interband absorption in the passive region can be provided by both spontaneous emission from the injection region and lasing-mode photons. An increase in the modal gain of the closed-mode lasing line is provided by shifting the energy minima of the conduction band and maxima of the valence band of the injection region with respect to the energy bands of the passive region.

Received: 05.04.2011
Accepted: 11.04.2011

 English version: Semiconductors, 2011, 45:10, 1378–1385

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