This article is cited in 14 papers

Semiconductor physics

I–V characteristics of high-voltage 4H-SiC diodes with a 1.1-eV Schottky barrier

P. A. Ivanov, I. V. Grekhov, O. I. Kon'kov, A. S. Potapov, T. P. Samsonova, T. V. Semenov

Ioffe Institute, St. Petersburg

Abstract: The I–V characteristics of high-voltage 4H-SiC diodes with a Schottky barrier $\sim$1.1 eV in height are measured and analyzed. The forward I–V characteristics proved to be close to “ideal” in the temperature range of 295–470 K. The reverse I–V characteristics are adequately described by the model of thermionic emission at the voltages to 2 kV in the temperature range of 361–470 K if, additionally, a barrier lowering with an increase in the band bending in the semiconductor is taken into account.

Received: 28.03.2011
Accepted: 11.04.2011

 English version: Semiconductors, 2011, 45:10, 1374–1377

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