Abstract:
Heterostructures with an active region containing a Ga$_{0.59}$In$_{0.41}$As quantum well located between GaAs$_{1-y}$P$_y$ compensating layers were studied using photoluminescence spectroscopy. It was shown that an increase in the phosphorus content in compensating layers makes it possible to obtain unrelaxed heterostructures with wider Ga$_{0.59}$In$_{0.41}$As quantum wells. On the basis of photoluminescence studies, the parameters of such a composite active region were chosen with a view to attaining the longest lasing wavelength possible. Laser heterostructures with a composite active region consisting of a highly strained Ga$_{0.59}$In$_{0.41}$As quantum well located between GaAs$_{0.85}$P$_{0.15}$ compensating layers were grown on GaAs substrates by metalloorganic chemical vapor deposition. Stripe mesa-structure laser diodes of 100-$\mu$m aperture emitting at 1220 nm were fabricated. The highest emission power of these laser diodes in the continuous-wave regime amounted to 2 W per output mirror.
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