This article is cited in
2 papers
Semiconductor physics
Simulation of optical properties of silicon solar cells textured with penetrating V-shaped grooves
G. G. Untila,
A. P. Palov,
A. Yu. Poroĭkov,
T. V. Rakhimova,
Yu. A. Mankelevich,
T. N. Kost,
A. B. Chebotareva,
V. V. Dvorkin Lomonosov Moscow State University, Skobeltsyn Institute of Nuclear Physics
Abstract:
The coefficients of reflection
$(R)$, transmission
$(T)$, and absorption
$(A)$ of light for two wavelengths
$\lambda$ = 1000 and 1100 nm for silicon wafers that have thicknesses
$t$ = 50, 100, and 200
$\mu$m and are textured with penetrating V-shaped grooves with various geometries have been calculated; the half-width of groove’s base
$w$ (10, 20, and 30
$\mu$m) and the depth of the groove
$d$ (0
$\le d\le t$) have been varied. In the case of an increase in the aspect ratio
$d/w$ (in the case of
$\lambda$ = 1100 nm), the absorption curve
$A(d/w)$ monotonically ascends from 6.6 to 67.6%, whereas, for
$\lambda$ = 1000 nm, a nontrivial dependence
$A(d/w)$ is observed: the absorption coefficient first increases to 54%, attains then a maximum of 97% at
$d/w$ = 3, and then decreases at
$d > t/2$ for all values of
$w$. This effect of a decrease in absorption with an increase in
$d/w$ distinguishes texturing with penetrating grooves from conventional surface texturing. Distributions of angles of deviations of photons in the plane of bottoms of grooves are obtained; these distributions are represented by a set of
$\delta$-type functions.
Received: 22.02.2011
Accepted: 11.03.2011
Fulltext:
PDF file (247 kB)
