This article is cited in 1 paper

Amorphous, glassy, organic semiconductors

Tin impurity centers in glassy germanium chalcogenides

G. A. Bordovskii^a, P. V. Gladkikh^a, M. Yu. Kozhokar^a, A. V. Marchenko^a, P. P. Seregin^a, E. I. Terukov<sup>b

a</sup> Herzen State Pedagogical University of Russia, St. Petersburg
^b Ioffe Institute, St. Petersburg

Abstract: Tin atoms produced by radioactive decay of $^{119mm}$Sn and $^{119}$Sn impurity atoms in the structure of Ge$_x$S$_{1-x}$ and Ge$_x$Se$_{1-x}$ glasses are stabilized in the form of Sn$^{2+}$ and Sn$^{4+}$ ions and correspond to ionized states of the amphoteric two-electron center with negative correlation energy (Sn$^{2+}$ is an ionized acceptor, and Sn$^{4+}$ is an ionized donor), whereas the neutral state of the Sn$^{3+}$ center appears to be unstable. $^{119}$Sn atoms produced by radioactive decay of $^{119m}$Te impurity atoms in the structure of Ge$_x$S$_{1-x}$ and Ge$_x$Se$_{1-x}$ glasses are stabilized at both chalcogen sites (they are electrically inactive) and germanium sites.

Received: 11.04.2011
Accepted: 15.04.2011

 English version: Semiconductors, 2011, 45:10, 1346–1351

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