This article is cited in 9 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Interfacial luminescence in an InAs/InAsSbP isotype type II heterojunction at room temperature

M. M. Grigor'ev, È. V. Ivanov, K. D. Moiseev

Ioffe Institute, St. Petersburg

Abstract: Interfacial luminescence on a single type II heterointerface in the InAs/InAsSbP system at room temperature is observed for the first time. It is confirmed experimentally that a single InAs/InAsSbP hetero-structure is a staggered type II heterojunction. The formation of an electron channel at the heterointerface on the $n$-InAs side in the $n$-InAs/$n$-InAsSbP heterostructure does not lead to the emergence of the radiative interfacial luminescence, while the $p$-InAs/$p$-InAsSbP heterostructure under the reverse bias manifests the interfacial luminescence caused by radiative transitions of holes from the occupied surface states localized at the heterointerface. The discovery of an intense interfacial luminescence comparable with bulk luminescence in intensity opens novel opportunities for the design of multicolor light-emitting diodes and integrated opto-electronic matrices for the mid-IR range of 3–5 $\mu$m.

Received: 11.04.2011
Accepted: 18.04.2011

 English version: Semiconductors, 2011, 45:10, 1334–1338

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