This article is cited in 1 paper

Semiconductor structures, low-dimensional systems, quantum phenomena

Photoelectric properties of porous GaN/SiC heterostructures

M. G. Mynbaeva, A. A. Sitnikova, K. J. Mynbaev

Ioffe Institute, St. Petersburg

Abstract: The origin of photoconductivity in porous structures formed by anodization of GaN/SiC heterostructures has been studied. It is shown by comparing the photoelectric, optical, electrical, and structural properties of untreated and anodized heterostructures that this effect is due to the presence of charged states at the interface between GaN and SiC that are specific to the anodization conditions.

Received: 30.03.2011
Accepted: 11.04.2011

 English version: Semiconductors, 2011, 45:10, 1317–1320

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