G. A. Kachurin, S. G. Cherkova, V. A. Skuratov, D. V. Marin, V. G. Kesler, V. A. Volodin, “Formation of light-emitting nanostructures in layers of stoichiometric SiO<nobr>$_2$</nobr> irradiated with swift heavy ions”, Fizika i Tekhnika Poluprovodnikov, 2011, Volume 45, Issue 10,Pages <nobr>1363

This article is cited in 3 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Formation of light-emitting nanostructures in layers of stoichiometric SiO$_2$ irradiated with swift heavy ions

G. A. Kachurin^a, S. G. Cherkova^a, V. A. Skuratov^b, D. V. Marin^ac, V. G. Kesler^a, V. A. Volodin^ac

^a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^b Joint Institute for Nuclear Research, Dubna, Moscow region
^c Novosibirsk State University

Abstract: Thermally grown SiO$_2$ layers have been irradiated with 700-MeV Bi ions with doses of (3–10) $\times$ 10$^{12}$ cm$^{-2}$. It is found that, even after a dose of 3 $\times$ 10$^{12}$ cm$^{-2}$, a photoluminescence band in the region of 600 nm appears. Its intensity levels off at a dose of $\sim$5 $\times$ 10$^{12}$ cm$^{-2}$. The nature of the emission centers is studied by the methods of infrared transmission, Raman scattering, X-ray photoelectron spectroscopy, ellipsometry, and the reaction to passivating low-temperature anneals. It is established that irradiation brings about a decrease in the number of Si–O bonds with a relevant increase in the Si–Si bonds. It is assumed that the photoluminescence is caused by nanostructures containing an excess Si and/or having a deficit of O. The reaction of reduction of SiO$_2$ proceeds in ion tracks due to high levels of ionization and heating within these tracks. The dose dependence is used to estimate the diameter of a track at 8–9 nm.

Received: 23.03.2011
Accepted: 28.03.2011