This article is cited in 1 paper

Semiconductor structures, low-dimensional systems, quantum phenomena

A DLTS study of 4H-SiC-based $p$–$n$ junctions fabricated by boron implantation

P. A. Ivanov^a, A. S. Potapov^a, T. P. Samsonova^a, O. Korolkov^b, N. Sleptsuk<sup>b

a</sup> Ioffe Institute, St. Petersburg
^b Tallinn University of Technology (Department of Electronics), 19086 Tallinn, Estonia

Abstract: Deep-level transient spectroscopy (DLTS) has been used to study $p$–$n$ junctions fabricated by implantation of boron into epitaxial 4H-SiC films with $n$-type conductivity and the donor concentration (8–9) $\times$ 10$^{14}$ cm$^{-3}$. A DLTS signal anomalous in sign is observed; this signal is related to recharging of deep compensating boron-involved centers in the n-type region near the metallurgical boundary of the $p$–$n$ junction.

Received: 23.03.2011
Accepted: 28.03.2011

 English version: Semiconductors, 2011, 45:10, 1306–1310

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