This article is cited in 21 papers

Surface, interfaces, thin films

The effect of Sn impurity on the optical and structural properties of thin silicon films

V. V. Voitovych^a, V. B. Neimash^a, M. M. Krasko^a, A. G. Kolosiuk^a, V. Yu. Povarchuk^a, R. M. Rudenko^b, V. A. Makara^b, R. V. Petrunya^b, V. O. Juhimchuk^c, V. V. Strelchuk<sup>c

a</sup> Institute of Physics, National Academy of Sciences of Ukraine, Kiev
^b National Taras Shevchenko University of Kyiv, Faculty of Physics
^c Institute of Semiconductor Physics NAS, Kiev

Abstract: The effect of tin impurity on the structure and optical properties of thin-film amorphous silicon is investigated. It is established that tin impurity accelerates crystallization of amorphous silicon. Immediately after deposition of a film onto a substrate at a temperature of $\sim$300$^\circ$C, there is a crystalline phase of silicon in samples with tin. High-vacuum annealing at 350–750$^\circ$C leads to growth of the crystalline phase in films with tin: nanocrystals grow in size from $\sim$3.0 to 4.5 nm. At the same time, in films without tin, only the degree of the short-range order increases. Silicon film without tin remains amorphous over the entire range of annealing temperatures.

Received: 31.01.2011
Accepted: 16.03.2011

 English version: Semiconductors, 2011, 45:10, 1281–1285

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