This article is cited in 1 paper

Semiconductor physics

Comparative investigation of InGaP/GaAs pseudomorphic field-effect transistors with triple doped-channel profiles

Jung-Hui Tsai^a, Der-Feng Guo^b, Wen-Shiung Lour<sup>c

a</sup> Department of Electronic Engineering, National Kaohsiung Normal University, Kaohsiung 802, Taiwan
^b Department of Electronic Engineering, Air Force Academy, Kaohsiung, Taiwan
^c Department of Electrical Engineering, National Taiwan Ocean University, Keelung, Taiwan

Abstract: In this article, the comparison of DC performance on InGaP/GaAs pseudomorphic field-effect transistors with tripe doped-channel profiles is demonstrated. As compared to the uniform and high-medium-low doped-channel devices, the low-medium-high doped-channel device exhibits the broadest gate voltage swing and the best device linearity because more twodimensional electron gases are formed in the heaviest doped channel to enhance the magnitude of negative threshold voltage. Experimentally, the transconductance within 50% of its maximum value for gate voltage swing is 4.62 V in the low-medium-high doped-channel device, which is greater than 3.58 (3.30) V in the uniform (high-medium-low) doped-channel device.

Received: 15.02.2011
Accepted: 22.02.2011

Language: English

 English version: Semiconductors, 2011, 45:9, 1231–1233

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