This article is cited in 6 papers

Semiconductor physics

Diode lasers emitting at 1190 nm with a highly strained GaInAs quantum well and GaAsP compensating layers MOCVD-grown on a GaAs substrate

D. A. Vinokurov, D. N. Nikolaev, N. A. Pikhtin, A. L. Stankevich, V. V. Shamakhov, A. D. Bondarev, N. A. Rudova, I. S. Tarasov

Ioffe Institute, St. Petersburg

Abstract: Laser heterostructures with an active region consisting of a highly strained GaInAs quantum well located between GaAsP compensating layers were grown by metal-organic chemical vapor deposition on GaAs substrates. Stripe mesa-structure laser diodes of 100 $\mu$m aperture emitting at 1190 nm were fabricated. The highest emission power of these diodes in the CW mode amounted to 4.5 W per output mirror. Due to the presence of compensating GaAsP barriers, the GaInAs quantum well remains unrelaxed, which eliminates the spread in the maximum emission power of laser diodes produced from the same heterostructure.

Received: 15.02.2011
Accepted: 21.02.2011

 English version: Semiconductors, 2011, 45:9, 1227–1230

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