This article is cited in 13 papers

Semiconductor physics

A decrease in ohmic losses and an increase in power in GaSb photovoltaic converters

F. Yu. Soldatenkov, S. V. Sorokina, N. Kh. Timoshina, V. P. Khvostikov, Yu. M. Zadiranov, M. G. Rastegaeva, A. A. Usikova

Ioffe Institute, St. Petersburg

Abstract: The transmission-line model with radial and rectangular geometry of contact pads has been used to study the contact systems Cr–Au, Cr–Au–Ag–Au, Ti–Pt–Au, Pt–Ti–Pt–Au, Pt–Au, Ti–Au, Ti–Pt–Ag, Ti–Pt–Ag–Au, and Pt–Ag deposited on the $p$-GaSb surface by the methods of magnetron sputtering and resistive evaporation. It is established that the contact systems Ti–Pt–Ag–Au and Ti–Pt–Ag exhibit the smallest values of the specific contact resistance ($\rho_c\le$ 10$^{-6}$ $\Omega$ cm$^2$), which makes it possible to use these systems in fabrication of photovoltaic converters generating photocurrents with densities as high as 15 A/cm$^2$.

Received: 14.02.2011
Accepted: 21.02.2011

 English version: Semiconductors, 2011, 45:9, 1219–1226

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