This article is cited in 2 papers

Micro- and nanocrystalline, porous, composite semiconductors

Distribution of CdSe nanoparticles synthesized in porous SiO$_x$ matrix

Yu. Yu. Bacherikov, I. Z. Indutnii, O. B. Okhrimenko, S. V. Optasyuk, P. E. Shepeliavyi, V. V. Ponomarenko

Institute of Semiconductor Physics NAS, Kiev

Abstract: Photoluminescence spectra of CdSe nanoparticles synthesized by the chemical method from an aqueous solution are studied in relation to nanoparticle location over depth in the porous SiO$_x$ layer consisting of a set of distinct SiO$_x$ columns $\sim$(10–100) nm in diameter. An analysis of radiative characteristics of this structure shows that the distributions of different-size nanoparticle fractions over the nanocomposite layer depth are different. A model explaining the cause of such distributions is considered. Within this model the parameter defining the “constrained geometry” notion for the used conditions of CdSe nanoparticles’ growth in the SiO$_x$ matrix is estimated.

Received: 16.02.2011
Accepted: 25.02.2011

 English version: Semiconductors, 2011, 45:9, 1289–1293

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