A. S. Len'shin, V. M. Kashkarov, P. V. Seredin, Yu. M. Spivak, V. A. Moshnikov, “XANES and IR spectroscopy study of the electronic structure and chemical composition of porous silicon on $n$- and $p$-type substrates”, Fizika i Tekhnika Poluprovodnikov, 2011, Volume 45, Issue 9,Pages 1229

This article is cited in 32 papers

Micro- and nanocrystalline, porous, composite semiconductors

XANES and IR spectroscopy study of the electronic structure and chemical composition of porous silicon on $n$- and $p$-type substrates

A. S. Len'shin^a, V. M. Kashkarov^a, P. V. Seredin^a, Yu. M. Spivak^b, V. A. Moshnikov^b

^a Voronezh State University
^b Saint Petersburg Electrotechnical University "LETI"

Abstract: The differences in the electronic structure and composition of porous silicon samples obtained under identical conditions of electrochemical etching on the most commonly used $n$- and $p$-type substrates with different conductivities are demonstrated by X-ray absorption near-edge spectroscopy (XANES) and Fourier transform IR spectroscopy (FTIR) methods. It is shown that significantly higher oxidation and saturation with hydrogen is observed for the porous layer on $n$-type substrates.

Received: 07.02.2011
Accepted: 16.02.2011