This article is cited in 5 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Specific features of photoluminescence properties of copper-doped cadmium selenide quantum dots

G. I. Tselikov^a, S. G. Dorofeev^b, P. N. Tananaev^b, V. Yu. Timoshenko<sup>a

a</sup> Lomonosov Moscow State University, Faculty of Physics
^b Lomonosov Moscow State University, Faculty of Chemistry

Abstract: The effect of doping with copper on the photoluminescence properties of cadmium selenide quantum dots 4 nm in dimension is studied. The quenching of the excitonic photoluminescence band related to the quantum dots and the appearance of an impurity photoluminescence band in the near-infrared region are observed after doping of the quantum dots with copper. It is established that, on doping of the quantum dots, the photoluminescence kinetics undergoes substantial changes. The photoluminescence kinetics of the undoped quantum dots is adequately described by a sum of exponential relaxation relations, whereas the photoluminescence kinetics experimentally observed in the region of the impurity band of the copper-doped samples follows stretched exponential decay, with the average lifetimes 0.3–0.6 $\mu$s at the photon energies in the range of 1.47–1.82 eV. The experimentally observed changes in the photoluminescence properties are attributed to transformation of radiative centers in the quantum dots when doped with copper atoms.

Received: 16.02.2011
Accepted: 25.02.2011

 English version: Semiconductors, 2011, 45:9, 1173–1176

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