Abstract:
The results of calculations of the band gap in GaP$_x$N$_y$As$_{1-x-y}$ alloys and the estimated parameter of hybridization of the conduction band in GaP and the localized level of nitrogen are reported. The optical properties of quantum-confined heterostructures based on GaP$_x$N$_y$As$_{1-x-y}$ alloys synthesized on the GaP (100) substrate surface are studied by photoluminescence measurements in the temperature range of 15–300 K. The heterostructures consist of GaP$_{0.814}$N$_{0.006}$As$_{0.18}$ quantum wells separated by GaP barrier layers. The well width and the barrier thickness are 5 nm. Heterostructures with different numbers of periods are considered. On optical excitation of the structures, an intense photoluminescence line is observed in the spectral range 620–650 nm. The photoluminescence spectra of the GaP$_{0.814}$N$_{0.006}$As$_{0.18}$/GaP quantum wells are profoundly broadened because of the inhomogeneity of the quaternary alloy in composition. It is established that the increase in the number of quantum well layers from 10 to 25 does not results in degradation of the photoluminescence properties of the heterostructures. The results of the study support the view that it is possible to produce efficient optoelectronic devices on the basis of GaP$_x$N$_y$As$_{1-x-y}$ alloys.
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