This article is cited in 1 paper

Surface, interfaces, thin films

Influence of annealing on the metal/semiconductor contacts deposited on sulfur-treated $n$-GaAs surface

E. V. Erofeev^a, V. A. Kagadei<sup>b

a</sup> "Mikran" Research and Production Company, Tomsk
^b OOO Submicron Technologies, Tomsk, 634055, Russia

Abstract: Comparative analysis of the influence of thermal annealing on Ge/Au/Ni-, Ge/Au/Ti/Au-, and Ge/Au/Ni/Ti/Au-based ohmic contacts and Ti/Au-based Schottky contacts deposited on an $n$-GaAs (100) surface treated and nontreated in (NH$_4$)$_2$S aqueous solution have been performed. Annealing conditions for ohmic contacts are found that lead to a decrease in the specific contact resistance of sulfur-treated samples by a factor of 2.5–15 in comparison with the nontreated samples. Optimal annealing conditions are also determined for sulfur-treated GaAs samples with Schottky contacts, which make it possible to reduce the ideality factor and increase the barrier height and the breakdown voltage with respect to the nontreated samples.

Received: 26.01.2011
Accepted: 09.02.2011

 English version: Semiconductors, 2011, 45:9, 1148–1152

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