This article is cited in 2 papers

Spectroscopy, interaction with radiation

Conductivity compensation in $p$-6H-SiC in irradiation with 8-MeV protons

A. A. Lebedev^a, V. V. Kozlovsky^b, S. V. Belov^a, E. V. Bogdanova^a, G. A. Oganesyan<sup>a

a</sup> Ioffe Institute, St. Petersburg
^b St. Petersburg Polytechnic University

Abstract: Carrier removal rate $(V_d)$ in $p$-6H-SiC in its irradiation with 8-MeV protons has been studied. The $p$-6H-SiC samples were produced by sublimation in vacuum. $V_d$ was determined by analysis of capacitance-voltage characteristics and from results of Hall effect measurements. It was found that complete compensation of samples with initial value of $N_a-N_d\approx$ 1.5 $\times$ 10$^{18}$ cm$^{-3}$ occurs at an irradiation dose of $\sim$1.1 $\times$ 10$^{16}$ cm$^{-2}$. In this case, the carrier removal rate was $\sim$130 cm$^{-1}$.

Received: 02.03.2011
Accepted: 09.03.2011

 English version: Semiconductors, 2011, 45:9, 1145–1147

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