I. I. Izhnin, A. I. Izhnin, E. I. Fitsych, N. A. Smirnova, I. A. Denisov, M. Pociask, K. J. Mynbaev, “Defect structure of Cd$_x$Hg$_{1-x}$Te films grown by liquid-phase epitaxy, studied by means of low-energy ion treatment”, Fizika i Tekhnika Poluprovodnikov, 2011, Volume 45, Issue 9,Pages 1166

This article is cited in 5 papers

Electronic properties of semiconductors

Defect structure of Cd$_x$Hg$_{1-x}$Te films grown by liquid-phase epitaxy, studied by means of low-energy ion treatment

I. I. Izhnin^a, A. I. Izhnin^a, E. I. Fitsych^a, N. A. Smirnova^b, I. A. Denisov^b, M. Pociask^c, K. J. Mynbaev^d

^a Karat Scientific and Production Enterprise, L'vov
^b JSC "Giredmet" SRC RF, the Federal State Research and Design Institute of Rare Metal Industry, Moscow
^c Institute of Physics, Rzeszów University, 35-310, Rzeszów, Poland
^d Ioffe Institute, St. Petersburg

Abstract: Treatment with low-energy ions and measurements of electrical parameters of samples have been used to study the defect structure of Cd$_x$Hg$_{1-x}$Te films grown by liquid-phase epitaxy. The films contain neutral defects supposedly associated with tellurium nanoinclusions. Ion treatment electrically activates these defects, with a high concentration of donor centers ($\sim$10$^{17}$ cm$^{-3}$) created in the films. These defects decompose in $\sim$10$^3$ min of aging at room temperature. Then the properties of the material are determined by the concentration of residual donors, which is found to be very low (down to $\sim$10$^{14}$ cm$^{-3}$) for the films under study.

Received: 24.02.2011
Accepted: 04.03.2011