This article is cited in 15 papers

Manufacturing, processing, testing of materials and structures

Ga$_2$O$_3$ films formed by electrochemical oxidation

V. M. Kalygina, A. N. Zarubin, E. P. Naiden, V. A. Novikov, Yu. S. Petrova, O. P. Tolbanov, A. V. Tyazhev, T. M. Yaskevich

Siberian Physical-Technical Institute of the Tomsk State University

Abstract: The effect of oxygen plasma on gallium oxide films formed by electrochemical oxidation of $n$-GaAs wafers with a donor concentration $N_d$ = (1–2) $\times$ 10$^{16}$ cm$^{-3}$ has been investigated. It is shown that the treatment in an oxygen plasma at a temperature of 50–90$^\circ$C increases the concentration of $\beta$-phase crystallites, which causes an increase in the permittivity, a decrease in the dielectric dissipation factor, and a change in the conductivity of GaAs-$\langle$gallium oxide$\rangle$-metal structures.

 English version: Semiconductors, 2011, 45:8, 1097–1102

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