This article is cited in 10 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Piezoelectric effect in GaAs nanowires

I. P. Sotnikov^ab, D. E. Afanasev^c, V. A. Petrov^a, G. È. Cirlin^abd, A. D. Bouravlev^ab, Yu. B. Samsonenko^abd, A. Khrebtov^b, E. M. Tanklevskaya^b, I. A. Seleznev<sup>e

a</sup> St. Petersburg Academic University — Nanotechnology Research and Education Centre of the Russian Academy of Sciences (the Academic University)
^b Ioffe Institute, St. Petersburg
^c St. Petersburg State University, Faculty of Physics
^d Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg
^e ,

Abstract: The anomalous piezoelectric effect in GaAs nanowires was detected (the piezoelectric module $d_{33}\approx$ 26 pC/N). This result can be explained by the dominant content of the phase with the wurtzite-type crystal structure in GaAs nanowires and an increased pressing force on the contact layer.

Received: 17.02.2011
Accepted: 25.02.2011

 English version: Semiconductors, 2011, 45:8, 1082–1084

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