This article is cited in 28 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Mechanisms of charge transport in anisotype $n$-TiO$_2$/$p$-CdTe heterojunctions

V. V. Brus^a, M. I. Ilashschuk^b, Z. D. Kovalyuk^a, P. D. Mar'yanchuk^b, K. S. Ulyanytsky^a, B. N. Gritsyuk<sup>b

a</sup> Frantsevich Institute of Materials Science Problems, National Academy of Sciences of Ukraine, Kiev
^b Chernivtsi National University named after Yuriy Fedkovych

Abstract: Surface-barrier anisotype $n$-TiO$_2$/$p$-CdTe heterojunctions are fabricated by depositing thin titanium-dioxide films on a freshly cleaved surface of single-crystalline cadmium-telluride wafers by reactive magnetron sputtering. It is established that the electric current through the heterojunctions under investigation is formed by generation-recombination processes in the space-charge region via a deep energy level and tunneling through the potential barrier. The depth and nature of the impurity centers involved in the charge transport are determined.

Received: 13.01.2011
Accepted: 21.01.2011

 English version: Semiconductors, 2011, 45:8, 1077–1081

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