This article is cited in 16 papers

Semiconductor structures, low-dimensional systems, quantum phenomena

Electronic states in epitaxial graphene fabricated on silicon carbide

S. Yu. Davydov

Ioffe Institute, St. Petersburg

Abstract: An analytical expression for the density of states of a graphene monolayer interacting with a silicon carbide surface (epitaxial graphene) is derived. The density of states of silicon carbide is described within the Haldane-Anderson model. It is shown that the graphene-substrate interaction results in a narrow gap of $\sim$0.01–0.06 eV in the density of states of graphene. The graphene atom charge is estimated; it is shown that the charge transfer from the substrate is $\sim$10$^{-3}$–10$^{-2}e$ per graphene atom.

Received: 24.01.2011
Accepted: 11.02.2011

 English version: Semiconductors, 2011, 45:8, 1070–1076

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